IRF6201PBF

Manufacturer Part IRF6201PBF
Manufacturer Rochester Electronics
Description HEXFET POWER MOSFET
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IRF6201PBF PDF
Availability 910 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:2.45mOhm @ 27A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:195 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:8.555 pF @ 16 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
More Information
IRF6201PBF
IRF6201PBF
Rochester Electronics IRF6201PBF is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IRF6201PBF PDF
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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