NVMFS5C680NLT1G

Manufacturer Part NVMFS5C680NLT1G
Manufacturer Rochester Electronics
Description POWER FIELD-EFFECT TRANSISTOR
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet NVMFS5C680NLT1G PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 28 - Dec 02 2024
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Product Attributes
Type Description
Series:Automotive, AEC-Q101
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8.1A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:27.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.4W (Ta), 24W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
More Information
NVMFS5C680NLT1G
NVMFS5C680NLT1G
Rochester Electronics NVMFS5C680NLT1G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
NVMFS5C680NLT1G PDF
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