TPH3208LDG

Manufacturer Part TPH3208LDG
Manufacturer Transphorm
Description GANFET N-CH 650V 20A 3PQFN
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TPH3208LDG PDF
Availability 285 pieces
Shipped from HK warehouse
Expected Shipping Nov 26 - Nov 30 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id:2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 8 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
More Information
TPH3208LDG
TPH3208LDG
Transphorm TPH3208LDG is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TPH3208LDG PDF
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