IPP086N10N3G

Manufacturer Part IPP086N10N3G
Manufacturer Rochester Electronics
Description POWER FIELD-EFFECT TRANSISTOR, 8
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 25 - Dec 29 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
More Information
IPP086N10N3G
IPP086N10N3G
Rochester Electronics IPP086N10N3G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
IPP041N04NG
IPP041N04NG
POWER FIELD-EFFECT TRANSISTOR, 8
Rochester Electronics
IPP086N10N3G
IPP086N10N3G
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Payment
Payment method Hand Fee
Telegraphic Transfer Request service
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Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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