IQE013N04LM6ATMA1

Manufacturer Part IQE013N04LM6ATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 40V 31A/205A 8TSON
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 9828 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 51µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PG-TSON-8-4
Package / Case:8-PowerTDFN
More Information
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1
IR (Infineon Technologies) IQE013N04LM6ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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