SQ2325ES-T1_GE3

Manufacturer Part SQ2325ES-T1_GE3
Manufacturer Vishay / Siliconix
Description MOSFET P-CH 150V 840MA TO236
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SQ2325ES-T1_GE3 PDF
Availability 7894 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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Product Attributes
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:840mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.77Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3W (Tc)
Operating Temperature:-55°C ~ 175°C (TA)
Mounting Type:Surface Mount
Supplier Device Package:TO-236 (SOT-23)
Package / Case:TO-236-3, SC-59, SOT-23-3
More Information
SQ2325ES-T1_GE3
SQ2325ES-T1_GE3
Vishay / Siliconix SQ2325ES-T1_GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SQ2325ES-T1_GE3 PDF
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