IPB60R099P7ATMA1

Manufacturer Part IPB60R099P7ATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 650V 31A D2PAK
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPB60R099P7ATMA1 PDF
Availability 404 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1952 pF @ 400 V
FET Feature:-
Power Dissipation (Max):117W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
More Information
IPB60R099P7ATMA1
IPB60R099P7ATMA1
IR (Infineon Technologies) IPB60R099P7ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPB60R099P7ATMA1 PDF
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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