BSZ097N04LSGATMA1

Manufacturer Part BSZ097N04LSGATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 40V 12A/40A 8TSDSON
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BSZ097N04LSGATMA1 PDF
Availability 28748 pieces
Shipped from HK warehouse
Expected Shipping Nov 28 - Dec 02 2024
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Product Attributes
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
More Information
BSZ097N04LSGATMA1
BSZ097N04LSGATMA1
IR (Infineon Technologies) BSZ097N04LSGATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BSZ097N04LSGATMA1 PDF
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