SIS402DN-T1-GE3

Manufacturer Part SIS402DN-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 30V 35A PPAK1212-8
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SIS402DN-T1-GE3 PDF
Availability 24 pieces
Shipped from HK warehouse
Expected Shipping Feb 21 - Feb 25 2025
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
More Information
SIS402DN-T1-GE3
SIS402DN-T1-GE3
Vishay / Siliconix SIS402DN-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SIS402DN-T1-GE3 PDF
Same Series
SIS402DN-T1-GE3
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