| Manufacturer Part | TK9A60D(STA4,Q,M) |
|---|---|
| Manufacturer | Toshiba Electronic Devices and Storage Corporation |
| Description | MOSFET N-CH 600V 9A TO220SIS |
| Category | Discrete Semiconductor |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Datasheet | TK9A60D(STA4,Q,M) PDF |
| Availability | 0 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Dec 23 - Dec 27 2024 |
In Stock Min.: 1 Mult.: 1
Not satisfied with the price? Want a lower wholesale price? Please send RFQ, and we will respond immediately
| Type | Description |
|---|---|
| Series: | π-MOSVII |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 830mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 24 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 45W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220SIS |
| Package / Case: | TO-220-3 Full Pack |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
MOSFET N-CH 600V 9A TO220SIS
