IPB180N10S403ATMA1

Manufacturer Part IPB180N10S403ATMA1
Manufacturer Rochester Electronics
Description MOSFET N-CH 100V 180A TO263-7-3
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPB180N10S403ATMA1 PDF
Availability 10577 pieces
Shipped from HK warehouse
Expected Shipping Dec 23 - Dec 27 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10.12 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
More Information
IPB180N10S403ATMA1
IPB180N10S403ATMA1
Rochester Electronics IPB180N10S403ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPB180N10S403ATMA1 PDF
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Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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