2N6667

Manufacturer Part 2N6667
Manufacturer NTE Electronics, Inc.
Description T-PNP SI-GEN PUR AMP
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet 2N6667 PDF
Availability 708 pieces
Shipped from HK warehouse
Expected Shipping Dec 19 - Dec 23 2024
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Product Attributes
Type Description
Series:-
Package:Bag
Part Status:Active
Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:3V @ 100mA, 10A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A, 3V
Power - Max:2 W
Frequency - Transition:-
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
More Information
2N6667
2N6667
NTE Electronics, Inc. 2N6667 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
2N6667 PDF
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Payment
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Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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