NJVMJD117T4G

Manufacturer Part NJVMJD117T4G
Manufacturer Rochester Electronics
Description POWER BIPOLAR TRANSISTOR, 2A, PN
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet NJVMJD117T4G PDF
Availability 2500 pieces
Shipped from HK warehouse
Expected Shipping Dec 06 - Dec 10 2024
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Power - Max:1.75 W
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
More Information
NJVMJD117T4G
NJVMJD117T4G
Rochester Electronics NJVMJD117T4G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
NJVMJD117T4G PDF
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
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POWER BIPOLAR TRANSISTOR, 2A, PN

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