Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC2413KT146Q

2SC2413KT146Q

ROHM Semiconductor

TRANS NPN 25V 0.05A SOT-346

3000

2SD1782KT146Q

2SD1782KT146Q

ROHM Semiconductor

TRANS NPN 80V 0.5A SOT-346

8999

UML4NTR

UML4NTR

ROHM Semiconductor

TRANS PNP 12V 0.5A SOT353

0

MMSTA56T146

MMSTA56T146

ROHM Semiconductor

TRANS PNP 80V 0.5A SOT-346

11626

2SA1037AKT146R

2SA1037AKT146R

ROHM Semiconductor

TRANS PNP 50V 0.15A SOT-346

860

2SC4617EBTLP

2SC4617EBTLP

ROHM Semiconductor

TRANS NPN 50V 0.15A EMT3

0

2SD1733TLP

2SD1733TLP

ROHM Semiconductor

TRANS NPN 80V 1A SOT-428

0

BC847CT116

BC847CT116

ROHM Semiconductor

TRANS NPN 45V 0.1A SST3

0

2SAR553RTL

2SAR553RTL

ROHM Semiconductor

TRANS PNP 50V 2A TSMT3

1535

2SC5103TLQ

2SC5103TLQ

ROHM Semiconductor

TRANS NPN 60V 5A SOT-428

0

2SB1316TL

2SB1316TL

ROHM Semiconductor

TRANS PNP DARL 100V 2A SOT-428

1743

2SAR544PFRAT100

2SAR544PFRAT100

ROHM Semiconductor

PNP DRIVER TRANSISTOR (CORRESPON

999

2SD2444KT146R

2SD2444KT146R

ROHM Semiconductor

TRANS NPN 15V 1A SOT-346

3802

2SD2318TLV

2SD2318TLV

ROHM Semiconductor

TRANS NPN 60V 3A SOT-428

2500

2SC5161TLB

2SC5161TLB

ROHM Semiconductor

TRANS NPN 400V 2A SOT-428 TR

0

2SC5824T100Q

2SC5824T100Q

ROHM Semiconductor

TRANS NPN 60V 3A SOT-89

1435

2SA1576AT106Q

2SA1576AT106Q

ROHM Semiconductor

TRANS PNP 50V 0.15A SOT-323

843

2SCR542F3TR

2SCR542F3TR

ROHM Semiconductor

NPN 3.0A 30V MIDDLE POWER TRANSI

2961

BC857BU3HZGT106

BC857BU3HZGT106

ROHM Semiconductor

PNP GENERAL PURPOSE TRANSISTOR (

4650

2SCR586D3TL1

2SCR586D3TL1

ROHM Semiconductor

POWER TRANSISTOR WITH LOW VCE(SA

1065

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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