SIZ998BDT-T1-GE3

Manufacturer Part SIZ998BDT-T1-GE3
Manufacturer Vishay / Siliconix
Description DUAL N-CHANNEL 30-V (D-S) MOSFET
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 35 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual), Schottky
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Rds On (Max) @ Id, Vgs:4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V, 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:790pF @ 15V, 2130pF @ 15V
Power - Max:3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerPair™
Supplier Device Package:8-PowerPair™
More Information
SIZ998BDT-T1-GE3
SIZ998BDT-T1-GE3
Vishay / Siliconix SIZ998BDT-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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