IPG20N10S4L35ATMA1

Manufacturer Part IPG20N10S4L35ATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET 2N-CH 8TDSON
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPG20N10S4L35ATMA1 PDF
Availability 14427 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs:17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1105pF @ 25V
Power - Max:43W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
More Information
IPG20N10S4L35ATMA1
IPG20N10S4L35ATMA1
IR (Infineon Technologies) IPG20N10S4L35ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPG20N10S4L35ATMA1 PDF
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EMS 3-7 days
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