NVMD6N03R2G

Manufacturer Part NVMD6N03R2G
Manufacturer Rochester Electronics
Description N-CHANNEL POWER MOSFET
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 4915 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:6A
Rds On (Max) @ Id, Vgs:32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:950pF @ 24V
Power - Max:1.29W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
More Information
NVMD6N03R2G
NVMD6N03R2G
Rochester Electronics NVMD6N03R2G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
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