| Manufacturer Part | DF11MR12W1M1B11BOMA1 |
|---|---|
| Manufacturer | Rochester Electronics |
| Description | IGBT MODULE |
| Category | Discrete Semiconductor |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Datasheet | DF11MR12W1M1B11BOMA1 PDF |
| Availability | 83 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Nov 25 - Nov 29 2024 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | * |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | 50A |
| Rds On (Max) @ Id, Vgs: | 23mOhm @ 50A, 15V |
| Vgs(th) (Max) @ Id: | 5.5V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3950pF @ 800V |
| Power - Max: | 20mW |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
IGBT MODULE
