APT45GP120B2DQ2G

Manufacturer Part APT45GP120B2DQ2G
Manufacturer Roving Networks / Microchip Technology
Description IGBT 1200V 113A 625W TMAX
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet APT45GP120B2DQ2G PDF
Availability 24 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:POWER MOS 7®
Package:Tube
Part Status:Active
IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):113 A
Current - Collector Pulsed (Icm):170 A
Vce(on) (Max) @ Vge, Ic:3.9V @ 15V, 45A
Power - Max:625 W
Switching Energy:900µJ (on), 905µJ (off)
Input Type:Standard
Gate Charge:185 nC
Td (on/off) @ 25°C:18ns/100ns
Test Condition:600V, 45A, 5Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Variant
Supplier Device Package:-
More Information
APT45GP120B2DQ2G
APT45GP120B2DQ2G
Roving Networks / Microchip Technology APT45GP120B2DQ2G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
APT45GP120B2DQ2G PDF
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EMS 3-7 days
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