TK12E80W,S1X

Manufacturer Part TK12E80W,S1X
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 800V 11.5A TO220
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TK12E80W,S1X PDF
Availability 280 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 300 V
FET Feature:-
Power Dissipation (Max):165W (Tc)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
More Information
TK12E80W,S1X
TK12E80W,S1X
Toshiba Electronic Devices and Storage Corporation TK12E80W,S1X is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TK12E80W,S1X PDF
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MOSFET N-CH 800V 11.5A TO220

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