SSM6H19NU,LF

Manufacturer Part SSM6H19NU,LF
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 40V 2A 6UDFN
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SSM6H19NU,LF PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:U-MOSVII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
Rds On (Max) @ Id, Vgs:185mOhm @ 1A, 8V
Vgs(th) (Max) @ Id:1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.2 nC @ 4.2 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (2x2)
Package / Case:6-UDFN Exposed Pad
More Information
SSM6H19NU,LF
SSM6H19NU,LF
Toshiba Electronic Devices and Storage Corporation SSM6H19NU,LF is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SSM6H19NU,LF PDF
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