TK31V60X,LQ

Manufacturer Part TK31V60X,LQ
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 600V 30.8A 4DFN
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TK31V60X,LQ PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:DTMOSIV-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:98mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):240W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-DFN-EP (8x8)
Package / Case:4-VSFN Exposed Pad
More Information
TK31V60X,LQ
TK31V60X,LQ
Toshiba Electronic Devices and Storage Corporation TK31V60X,LQ is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TK31V60X,LQ PDF
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