TK6A80E,S4X

Manufacturer Part TK6A80E,S4X
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 800V 6A TO220SIS
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TK6A80E,S4X PDF
Availability 19 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:π-MOSVIII
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
More Information
TK6A80E,S4X
TK6A80E,S4X
Toshiba Electronic Devices and Storage Corporation TK6A80E,S4X is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TK6A80E,S4X PDF
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MOSFET N-CH 800V 6A TO220SIS

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