IPD50R1K4CEAUMA1

Manufacturer Part IPD50R1K4CEAUMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 500V 3.1A TO252-3
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPD50R1K4CEAUMA1 PDF
Availability 2458 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:CoolMOS™ CE
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id:3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:178 pF @ 100 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
More Information
IPD50R1K4CEAUMA1
IPD50R1K4CEAUMA1
IR (Infineon Technologies) IPD50R1K4CEAUMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPD50R1K4CEAUMA1 PDF
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