BSZ123N08NS3GATMA1

Manufacturer Part BSZ123N08NS3GATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 80V 10A/40A 8TSDSON
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BSZ123N08NS3GATMA1 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 01 - Dec 05 2024
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Product Attributes
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 40 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 66W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerVDFN
More Information
BSZ123N08NS3GATMA1
BSZ123N08NS3GATMA1
IR (Infineon Technologies) BSZ123N08NS3GATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BSZ123N08NS3GATMA1 PDF
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