BSZ018N04LS6ATMA1

Manufacturer Part BSZ018N04LS6ATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 40V 27A/40A TSDSON
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 5129 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:OptiMOS™ 6
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-FL
Package / Case:8-PowerTDFN
More Information
BSZ018N04LS6ATMA1
BSZ018N04LS6ATMA1
IR (Infineon Technologies) BSZ018N04LS6ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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