SIE802DF-T1-GE3

Manufacturer Part SIE802DF-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 30V 60A 10POLARPAK
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SIE802DF-T1-GE3 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 23.6A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7000 pF @ 15 V
FET Feature:-
Power Dissipation (Max):5.2W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:10-PolarPAK® (L)
Package / Case:10-PolarPAK® (L)
More Information
SIE802DF-T1-GE3
SIE802DF-T1-GE3
Vishay / Siliconix SIE802DF-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SIE802DF-T1-GE3 PDF
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