NVMYS2D2N06CLTWG

Manufacturer Part NVMYS2D2N06CLTWG
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description MOSFET N-CH 60V 31A/185A LFPAK4
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4850 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.9W (Ta), 134W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK4 (5x6)
Package / Case:SOT-1023, 4-LFPAK
More Information
NVMYS2D2N06CLTWG
NVMYS2D2N06CLTWG
Sanyo Semiconductor/ON Semiconductor NVMYS2D2N06CLTWG is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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