| Manufacturer Part | SIS606BDN-T1-GE3 |
|---|---|
| Manufacturer | Vishay / Siliconix |
| Description | MOSFET N-CH 100V 9.4A/35.3A PPAK |
| Category | Discrete Semiconductor |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Datasheet | SIS606BDN-T1-GE3 PDF |
| Availability | 1667 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Nov 25 - Nov 29 2024 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | TrenchFET® Gen IV |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta), 35.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 17.4mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 30 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1470 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Package / Case: | PowerPAK® 1212-8 |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
MOSFET N-CH 100V 9.4A/35.3A PPAK
