SI7703EDN-T1-E3

Manufacturer Part SI7703EDN-T1-E3
Manufacturer Vishay / Siliconix
Description MOSFET P-CH 20V 4.3A PPAK1212-8
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SI7703EDN-T1-E3 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:48mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
More Information
SI7703EDN-T1-E3
SI7703EDN-T1-E3
Vishay / Siliconix SI7703EDN-T1-E3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SI7703EDN-T1-E3 PDF
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