SI8429DB-T1-E1

Manufacturer Part SI8429DB-T1-E1
Manufacturer Vishay / Siliconix
Description MOSFET P-CH 8V 11.7A 4MICROFOOT
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SI8429DB-T1-E1 PDF
Availability 11970 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:11.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:35mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 5 V
Vgs (Max):±5V
Input Capacitance (Ciss) (Max) @ Vds:1640 pF @ 4 V
FET Feature:-
Power Dissipation (Max):2.77W (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-XFBGA, CSPBGA
More Information
SI8429DB-T1-E1
SI8429DB-T1-E1
Vishay / Siliconix SI8429DB-T1-E1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SI8429DB-T1-E1 PDF
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